Product Summary
The IRFBA1405P is an automotive MOSFET. It can be used in (1)electric power steering (EPS); (2)anti-lock braking system (ABS); (3)wiper control; (4)climate control; (5)power door. This device utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche.
Parametrics
IRFBA1405P absolute maximum ratings: (1)Continuous Drain Current: 174 A; (2)Pulsed Drain Current: 680 A; (3)Power Dissipation: 330 W; (4)Linear Derating Factor: 2.2 W/°C; (5)Single Pulse Avalanche Energy: 560 mJ; (6)Peak Diode Recovery dv/dt: 5.0 V/ns; (7)Soldering Temperature, for 10 seconds: 300°C (1.6mm from case ); (8)Operating Junction and Storage Temperature Range: -55 to + 175 °C.
Features
IRFBA1405P features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175°C Operating Temperature; (5)Fast Switching; (6)Repetitive Avalanche Allowed up to Tjmax.
Diagrams
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![]() IRFBA1405P |
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![]() MOSFET N-CH 55V 174A SUPER-220 |
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![]() IRFBA1405PPBF |
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![]() MOSFET MOSFT 55V 174A 5mOhm 170nC |
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